| PART |
Description |
Maker |
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| CHM1191-99F_00 CHM1191 CHM1191-99F/00 |
GaAs Monolithic Microwave IC
|
United Monolithic Semic...
UMS[United Monolithic Semiconductors]
|
| CHT4016 |
4-16GHz 6-BIT DIGITAL ATTENUATOR GaAs Monolithic Microwave IC
|
United Monolithic Semiconductors
|
| CHR3663-QEG |
17-24GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD package
|
United Monolithic Semiconductors
|
| Q68000-A4444 CGY40 |
From old datasheet system
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| TIM7785-16UL |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM4450-4U |
MICROWAVE POWER GaAs FET
|
TOSHIBA
|
| TIM5964-8 |
MICROWAVE POWER GAAS FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM7785-16 |
MICROWAVE POWER GAAS FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM1213-15L |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM6472-30SL |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
